Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFET's

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• Hwang Jeong

  Ulsi Laboratory Lg Semicon Co.

• HWANG Hyunsang

  ULSI Laboratory of LG Semicon Co. Ltd.

• LEE Dong-Hoon

  ULSI Laboratory, LG Semicon Co.

• Hwang Hyunsang

  Ulsi Laboratory Lg Semicon Co.

• Lee Dong-hoon

  Ulsi Laboratory Lg Semicon Co.

関連論文

• Structural Evaluation of CVD WSix and Its Effect on Polycide Line Resistance
• Electrical Characteristics of Ultra Short Channel CMOS Device for Giga-bit DRAM Applications
• Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFET's

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