The Increase of the Native Oxide Thickness of H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• Yugami J.

  Central Research Laboratory Hitachi Ltd.

• ITOGA T.

  Central Research Laboratory, Hitachi Ltd.

• KOJIMA H.

  Central Research Laboratory, Hitachi Ltd.

• OHKURA M.

  Central Research Laboratory, Hitachi Ltd.

• Itoga T.

  Central Research Laboratory Hitachi Ltd.

• Ohkura M.

  Central Research Laboratory Hitachi Ltd.

関連論文

• The Increase of the Native Oxide Thickness of H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
• Application of CVD SiO_2 Single Layer Films to Inter-Poly Dielectrics of Flash Memories
• ON THE DIFFERENTIATION OF GERM DISKS IN C3H/HeN-BALB/cA MOUSE AGGREGATION CHIMERAS : Develpomental Biology : Abstracts of papers presented at the 60th Annual Meeting of the Zoological Society of Japan

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