Endurance Enhancement in microFLASH【○!R】 Memory Device
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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BLOOM Ilan
Saifun Semiconductors Ltd.
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Bloom Ilan
Saifun Semiconductors
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ALONI Efraim
Tower Semiconductor Ltd.
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GUTMAN Micha
Tower Semiconductor Ltd.
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ROIZIN Yakov
Tower Semiconductor Ltd.
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FINZI David
Tower Semiconductor Ltd.
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HYUN Choi
Tower Semiconductor Ltd.
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LEVY Dror
Saifun Semiconductor Ltd.
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LANN Ameet
Saifun Semiconductor Ltd.
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PAVAN Paolo
Saifun Semiconductor Ltd.
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Finzi David
Tower Semiconductors
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Pavan Paolo
Dipartimento Di Scienze Dell' Ingegneria E Infm Universita' Di Modena E Reggio Emilia
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Aloni Efraim
Tower Semiconductors
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BLOOM Ilan
Saifun Semiconductor Ltd.
関連論文
- Electron Discharge Model of Locally-Trapped Charge in Oxide-Nitride-Oxide (ONO) Gates for NROM^ Non-Volatile Semiconductor Memory Devices
- Endurance Enhancement in microFLASH【○!R】 Memory Device
- Can NROM, a 2Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells?