Electron Discharge Model of Locally-Trapped Charge in Oxide-Nitride-Oxide (ONO) Gates for NROM^<TM> Non-Volatile Semiconductor Memory Devices

スポンサーリンク

概要

• 論文の詳細を見る
• 2001-09-25

著者

• Shacham-diamand Yosi

  Tel Aviv University Dept. Of Physical Electronics

• LUSKY Eli

  Tel-Aviv University, Dept. of Physical Electronics

• BLOOM Ilan

  Saifun Semiconductors Ltd.

• EITAN Boaz

  Saifun Semiconductors Ltd.

• Lusky Eli

  Tel-aviv University Dept. Of Physical Electronics

• Eitan Boaz

  Saifun Semiconductors

• Bloom Ilan

  Saifun Semiconductors

• BLOOM Ilan

  Saifun Semiconductor Ltd.

関連論文

• Electron Discharge Model of Locally-Trapped Charge in Oxide-Nitride-Oxide (ONO) Gates for NROM^ Non-Volatile Semiconductor Memory Devices
• Endurance Enhancement in microFLASH【○!R】 Memory Device
• Can NROM, a 2Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells?

スポンサーリンク