Reduction of R_<On> in Vertical Power-MOSFETs due to Local Channel Doping
スポンサーリンク
概要
- 論文の詳細を見る
- 2000-08-28
著者
-
Fink C.
Institute Of Physics University Of German Federal Armed Forces
-
Eisele I.
Institute Of Physics University Of German Federal Armed Forces
-
Eisele I.
Institute Of Physics Universitat Der Bundeswehr Munich
-
Schulze J.
Institute Of Physics University Of German Federal Armed Forces
-
Hansch W.
Department Of Electrical Engineering Technical University Of Munich
-
WERNER W.
Infineon Technolgies AG
-
KANERT W.
Infineon Technolgies AG
関連論文
- Comparison of Sub-Bandgap Impact Ionization in Deep-Sub-Micron Conventional and Lateral Asymmetrical Channel nMOSFETs
- Reduction of R_ in Vertical Power-MOSFETs due to Local Channel Doping
- A Vertical, MOS-Based Silicon Tunneling Transistor