High Density 0.16μm Embedded-DRAM-ASIC Process Technology for a SoC Platform
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Higashino H.
Lsi Production Division Oki Electric Industry Co. Ltd.
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IDA J.
LSI Production Division, OKI Electric Industry Co., Ltd.
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TANAKA H.
LSI Production Division, OKI Electric Industry Co., Ltd.
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FUKUDA K.
VLSI R&D Center, OKI Electric Industry Co., Ltd.
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TAKEDA M.
LSI Production Division, OKI Electric Industry Co., Ltd.
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SHINOHARA H.
LSI Production Division, OKI Electric Industry Co., Ltd.
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NAKAYAMA N.
LSI Production Division, OKI Electric Industry Co., Ltd.
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SEO E.
LSI Production Division, OKI Electric Industry Co., Ltd.
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YOSHIDA K.
LSI Production Division, OKI Electric Industry Co., Ltd.
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MIYAKAWA Y.
LSI Production Division, OKI Electric Industry Co., Ltd.
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KAGEYAMA M.
LSI Production Division, OKI Electric Industry Co., Ltd.
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HARADA Y.
LSI Production Division, OKI Electric Industry Co., Ltd.
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MATSUMOTO M.
LSI Production Division, OKI Electric Industry Co., Ltd.
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INOUE T.
LSI Division, OKI Electric Industry Co., Ltd.
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YOKOYAMA F.
LSI Production Division, OKI Electric Industry Co., Ltd.
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Kageyama M.
Lsi Production Division Oki Electric Industry Co. Ltd.
関連論文
- High Density 0.16μm Embedded-DRAM-ASIC Process Technology for a SoC Platform
- Transmission Electron Microscopic Study of TiSi_2 Microstructures and the C49-C54 Phase Transformation in Narrow Lines