A Fatigue-Tolerant MFOS Structure with Large Memory Window of 3.6V Using Sr-Deficient and Bi-Excess SBTO Ferroelectric Film Prepared on SiO_2/Si Low Temperature by PLD Method
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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Matsumuro Y.
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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NODA M.
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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SUGIYAMA H.
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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OKUYAMA M.
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Okuyama M.
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S