NODA M. | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering

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概要

関連著者

Matsumuro Y.
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
NODA M.
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
SUGIYAMA H.
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
OKUYAMA M.
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
Okuyama M.
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

著作論文

A Fatigue-Tolerant MFOS Structure with Large Memory Window of 3.6V Using Sr-Deficient and Bi-Excess SBTO Ferroelectric Film Prepared on SiO_2/Si Low Temperature by PLD Method

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