Evaluation of Interface States in Gas Sensor with Pt–SiO2–SiC Structure under High-Temperature Conditions by AC Conductance Method

概要

論文の詳細を見る
A metal–oxide–semiconductor (MOS) capacitor was fabricated using Pt and a 6H–SiC substrate, and the interface state was evaluated in oxygen and hydrogen ambients under high-temperature conditions by the AC conductance technique. The relationship among interface state density ($D_{\text{it}}$), time constant ($\tau_{\text{it}}$) and energy level ($E_{\text{c}}-E_{\text{t}}$) was obtained. The atmosphere was repeatedly changed between hydrogen and oxygen. Some levels of a narrow region near the conduction band, levels near 0.4 eV, and levels of a wide region near the band center were observed. $D_{\text{it}}$ in the deeper levels increases in O2 atmosphere and an increase in $\tau_{\text{it}}$ accompanies it. In H2 atmosphere, $D_{\text{it}}$ in the deeper wide energy region near the band center decreases. This change is almost reversible. In the range of 300–500°C, the $D_{\text{it}}$ near the band center in O2 atmosphere increases with temperature.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-12-15