A 13.56 MHz CMOS RF Identification Passive Tag LSI with Ferroelectric Random Access Memory(Memory, <Special Section>Low-Power LSI and Low-Power IP)

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概要

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• A radio frequency identification tag LSI operating with the carrier frequency of 13.56 MHz as well as storing nonvolatile information in embedded ferroelectric random access memory (FeRAM) has been developed. A full wave rectifier composed of PMOS transistor diodes and NMOS transistor switches achieves RF-to-DC power conversion efficiency over 54%. The entire 16kbits write and read transaction time can be reduced to 2.1 sec by the use of FeRAM, which corresponds to 2.2 times speed enhancement over conventional EEPROM based tag LSIs. The communication range of the FeRAM based tag LSI can be effectively improved by storing antitheft information in a ferroelectric nonvolatile flipflop, which can reduce the power consumption of FeRAM from 27μW to 5μW. The communication range for the antitheft gate system becomes 70cm.

• 2005-04-01

著者

• Masui Shoichi

  Fujitsu Laboratories Ltd.

• TERAMOTO Toshiyuki

  Fujitsu Ltd.

関連論文

• Design Optimization of a High-Speed, Area-Efficient and Low-Power Montgomery Modular Multiplier for RSA Algorithm(Digital, Low-Power LSI and Low-Power IP)
• A 13.56 MHz CMOS RF Identification Passive Tag LSI with Ferroelectric Random Access Memory(Memory, Low-Power LSI and Low-Power IP)
• Design and Application of Ferroelectric Memory Based Nonvolatile SRAM(New System Paradigms for Integrated Electronics)

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