Bi_2Te_3の電子構造とゼーベック係数

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概要

• 論文の詳細を見る
• 1997-02-15

著者

• SEKINE Rika

  Shizuoka University, Department of Chemistry

• Sekine R

  Shizuoka Univ. Shizuoka Jpn

• Sekine R

  Shizuoka Univ. Hamamatsu Jpn

• Sugihara S

  Toshiba Corp. Kawasaki Jpn

• SUGIHARA Sunao

  Shonan Institute of Technology

• YONEKURA Isaku

  Shonan Institute of Technology

• ASAKAWA Kohji

  Shonan Institute of Technology

• Yonekura Isaku

  Department Of Materials Science And Ceramic Technology Shonan Institute Of Technology

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• Stress Control and Etching Study of W-Re as X-Ray Mask Absorber
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• Note on the Contribution of Relativity to Cu_2 Bonding
• The Electronic Structures of the Clean and H Adsorbed (111) Surfaces for MC (M=Ti,Zr and Nb); DV-Xα MO Calculations (第15回表面科学講演大会論文特集-2-)
• Geometric and Electronic Structures of V and Cr Clusters (第19回表面科学講演大会論文特集(2))
• H-Termination and Local DOS Effects for Silicon Nitride Cluster in Molecular Orbital Calculation
• Electronic Structures and Dielectric Properties of Substituted BaTiO_3
• Bi_2Te_3の電子構造とゼーベック係数
• Dielectric Property Change of Ferroelectrics and Electronic Structures

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