94-GHz f_T, 0.4-dB NF_<min> HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• Kiyota Yukihiro

  Sony Corporation Semiconductor Solutions Network Company

• YAMAGATA Hideo

  SONY Semiconductor Kyusyu

• BAIRO Masaaki

  SONY Semiconductor Kyusyu

• YANAGAWA Shusaku

  SONY Semiconductor Kyusyu

• KOMOTO Takeyoshi

  SONY Semiconductor Kyusyu

• OHISHI Masato

  SONY Semiconductor Kyusyu

• ARAI Chihiro

  SONY Semiconductor Kyusyu

関連論文

• 94-GHz f_T, 0.4-dB NF_ HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy
• 94-GHz f_T, 0.4-dB NF_ HBT with Optimized Si-cap and Extrinsic Base using Blanket SiGeC Epitaxy for Consumer Wireless Applications
• 94-GHz $f_{T}$, 0.4-dB $\mathit{NF}_{\text{min}}$ HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy

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