Stress on Junction-Down-Mounted Ridge-Waveguide Laser Diodes
スポンサーリンク
概要
- 論文の詳細を見る
A novel way of evaluating thermal stress on junction-down-mounted ridge-waveguide laser diodes is proposed and demonstrated. Namely, spatially resolved electroluminescence and photoluminescence observations revealed that a localized stress of $2.2\times 10^{7}$ Pa led to gradual degradation during aging.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
-
SHIMAOKA Makoto
Mechanical Engineering Research Laboratory, Hitachi Ltd.
-
Nakahara Koji
Central Research Laboratory Hitachi Ltd.
-
Nomoto Etsuko
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japa
-
Nomoto Etsuko
Central Research Laboratory Hitachi Ltd.
-
Shimaoka Makoto
Mechanical Engineering Research Laboratory Hitachi Ltd.
関連論文
- InGaAsP/InP Laser Diodes Mounted on Semi-Insulating SiC Ceramics : B-2: LD AND LED-1
- Stress on Junction-Down-Mounted Ridge-Waveguide Laser Diodes
- P-IMG-01 Multi-Optical Beam alignment system for Micro-projection(Imaging and Printing Technologies,Technical Program of Poster Session)