Study of the Electronic Properties of CeRhSn by μ^+ Knight Shift and Relaxation Measurements in Single Crystals(Condensed matter : Electronic Structure, Electrical, Magnetic and Optical Properties)

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We report on measurements of the Knight shift and relaxation behavior of spin polarized positive muons (μ^+) implanted in monocrystalline CeRhSn. A two-component signal is seen below 100 K which appears to indicate the presence of two different types of domains or phases in which Ce is either in an intermediate, valence fluctuating state, occupying a volume fraction of 〜80% above 1.3 K, or in the 3+ ionic state, respectively. The latter domains become dominant below 0.5 K and can be partially suppressed by an external field H_<ext>. The two associated Knight shifts and μSR line width's as well as the bulk susceptibility X_<bulk> reveal subtle changes at 30 K in the magnetic response. Strong anomalies, not present in X_<bulk>, are seen in the two Knight shifts for H_<ext> ⊥ c axis at 〜7K. Some of the observed subtleties may originate from the conduction electron system. The small observed μSR line width's are inconsistent with atomic disorder involved to explain certain non-Fermi liquid features. The absence of any kind of magnetic order is proven down to 50 mK.
社団法人日本物理学会の論文
2004-11-15