Designs for $\lambda=1.55$ μm GaN-Based Intersubband Laser Active Region

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概要

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• A systematic design of a GaN/AlGaN active region for a three-level intersubband laser emitting in the near-infrared is presented. The proposed system is based on a double coupled quantum well structure with the laser level energy separation corresponding to 1.55 μm ($\Delta E_{32}\sim 800$ meV), a wavelength important for optical communications. The lower laser level depopulates mostly via longitudinal optical phonon resonance, requiring $\Delta E_{21}\sim 90$ meV. The model for scattering rate calculations, including many-body carrier screening effects, was first tested by comparison with recent experimental measurements in GaN/AlGaN quantum wells, and a very good agreement was obtained. It was then employed to calculate the gain coefficient, a commonly used figure of merit for three level laser systems, and this in turn allowed the optimal structural parameters of GaN/AlGaN quantum well to be found.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-11-15

著者

• Harrison Paul

  Institute Of Microwaves And Photonics School Of Electronic And Electrical Engineering University Of

• Jovanović Vladimir

  Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University o

• Ikonić Zoran

  Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University o

• Indjin Dragan

  Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University o

• Soref Richard

  Sensor Directorate, AFRL/SNHC, Air Force Research Laboratory, Hanscom Air Force Base, Massachusetts

• Soref Richard

  Sensor Directorate Afrl/snhc Air Force Research Laboratory Hanscom Air Force Base

• Indjin Dragan

  Institute Of Microwaves And Photonics School Of Electronic And Electrical Engineering University Of

• Jovanovic Vladimir

  Institute Of Microwaves And Photonics School Of Electronic And Electrical Engineering University Of

• Ikonic Zoran

  Institute Of Microwaves And Photonics School Of Electronic And Electrical Engineering University Of

関連論文

• Designs for $\lambda=1.55$ μm GaN-Based Intersubband Laser Active Region

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