Avalanche Multiplication and Noise Characteristics of Thin InP p+–i–n+ Diodes

概要

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A simple random path length model for computing the statistics of avalanche gain and excess noise factor in thin InP p+–i–n+ diodes is presented. We incorporate the dead-space effect in our model, which is expected to play an important role in reducing noise in homojunction InP avalanche photodiodes (APDs). It is shown that the dead-space effect reduces avalanche noise when the device length is small. Our model is able to simulate the characteristics of multiplication gain and noise including the dead-space effect in InP p+–i–n+ diodes, particularly at device lengths $w$ of 0.1 μm and 0.2 μm. We demonstrated that the dead-space effect and feedback impact ionization are the dominant effects for improving excess noise factor in thin InP APDs.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-11-15