Interdiffusion in Compound Thin Film Grown on Binary Substrate under Time-Variable Boundary Conditions

スポンサーリンク

概要

• 論文の詳細を見る

• Interdiffusion in an epitaxial layer of a ternary semiconductor grown on thick binary substrate is investigated theoretically under time-variable boundary conditions typically used in conventional epitaxial methods. Precise calculations are carried out for Cd1-xMnxTe/CdTe which make it possible to calculate the concentration of metallic components that diffuse from the grown film into the substrate and vice versa. The processes of degradation during crystal growth in such systems are discussed in the cases of an ultra thin inclusion, graded-band-gap structure and a multilayered structure (superlattice).

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-11-15

著者

• Yoon Yung

  Inha University

• Kletsky Sergej

  Institute of Semiconductor Physics, pr. Nauki 45, Kiev 03028, Ukraine

• Kletsky Sergej

  Institute Of Semiconductor Physics

関連論文

• Interdiffusion in Compound Thin Film Grown on Binary Substrate under Time-Variable Boundary Conditions

スポンサーリンク