Higher Reliability Tetraethylorthosilicate SiO_2 Gate Insulator in Polysilicon Thin Film Transistors Formed by Two-Step Deposition Method

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-10-15

著者

• Kim Eugene

  Lcd R&d Center Lg. Philips Lcd

• CHAE Junghun

  LCD R&D Center, LG. Philips LCD

• JUNG Young-Sup

  LCD R&D Center, LG. Philips LCD

• KIM Jong-Il

  LCD R&D Center, LG. Philips LCD

• YANG Myung-Soo

  LCD R&D Center, LG. Philips LCD

• KIM Chang-Dong

  LCD R&D Center, LG. Philips LCD

関連論文

• Higher Reliability Tetraethylorthosilicate SiO_2 Gate Insulator in Polysilicon Thin Film Transistors Formed by Two-Step Deposition Method
• Higher Reliability Tetraethylorthosilicate SiO2 Gate Insulator in Polysilicon Thin Film Transistors Formed by Two-Step Deposition Method

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