Illumination of Double Snapback Mechanism in High Voltage Operating Grounded Gate Extended Drain N-type Metal-Oxide-Semiconductor Field Effects Transistor Electro-Static Discharge Protection Devices
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
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Park Jin
Technology & Product Development Center Hynix Semiconductor Inc.
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KIM Kil
Technology & Product Development Center, Hynix Semiconductor Inc.
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JUNG Yong
Technology & Product Development Center, Hynix Semiconductor Inc.
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SHIM Jin
Technology & Product Development Center, Hynix Semiconductor Inc.
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SO Hyung
Technology & Product Development Center, Hynix Semiconductor Inc.
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LEE Ji
Technology & Product Development Center, Hynix Semiconductor Inc.
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HWANG Lee
Technology & Product Development Center, Hynix Semiconductor Inc.
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Shim Jin
Technology & Product Development Center Hynix Semiconductor Inc.
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So Hyung
Technology & Product Development Center Hynix Semiconductor Inc.
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Hwang Lee
Technology & Product Development Center Hynix Semiconductor Inc.
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Kim Kil
Technology & Product Development Center Hynix Semiconductor Inc.
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Jung Yong
Technology & Product Development Center Hynix Semiconductor Inc.
関連論文
- Illumination of Double Snapback Mechanism in High Voltage Operating Grounded Gate Extended Drain N-type Metal-Oxide-Semiconductor Field Effects Transistor Electro-Static Discharge Protection Devices
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