The Possibility of Fabricating Light-Emitting Superlattices Composed of Si Quantum Films
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概要
- 論文の詳細を見る
A theoretical model for manufacturing a Si-based superlattice structure composed of ultrathin Si quantum films is proposed. The structure is made of alternating Si(001) quantum films of two different thicknesses, each of which is sandwiched between oxygen monolayers. The thickness of the quantum-well film is larger than that of the barrier film. It is demonstrated by a tight-binding approach that the proposed superlattices become direct band-gap semiconductors with significantly high oscillator strength in the visible region, and that this direct band-gap nature is explained in terms of zone-folding and quantum-confinement effects. This superlattice structure is simple and compatible with the existing Si-based technology.
- Japan Society of Applied Physicsの論文
- 2004-10-15
著者
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Nishida Masahiko
Physics Department Engineering Foundations Program Kanazawa Institute Of Technology