Control of Selectivity between SiGe and Si in Isotropic Etching Processes
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概要
- 論文の詳細を見る
The selectivity between SiGe and Si has been investigated in chemical dry etching. Starting from a pure CF4 process that etches SiGe with a good selectivity to Si, the modification of the gas mixture was studied with the aim of understanding the way these materials are etched in the presence of O2, N2 and/or CH2F2. Passivation phenomena were used to show that invert selectivities can be obtained. Their combination leads to ultrahigh Si:SiGe selectivity.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
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Borel Stephan
Cea-leti
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Arvet Christian
ST Microelectronics, 45 Rue des Martyrs, BP 217, 38019 Grenoble Cédex, France
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Bilde Jeremy
CEA-Léti, 17 Rue des Martyrs, 38054 Grenoble Cédex 9, France
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Caubet Véronique
ST Microelectronics, 850 Rue Jean Monnet, 38920 Crolles Cédex, France
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Louis Didier
CEA-Léti, 17 Rue des Martyrs, 38054 Grenoble Cédex 9, France
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Arvet Christian
St Microelectronics
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Bilde Jeremy
Cea-leti
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Caubet Veronique
St Microelectronics
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Louis Didier
Cea-leti