Design of Sequential Lateral Solidification Crystallization Method for Low Temperature Poly-Si Thin Film Transistors
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Park J‐y
Technology Development Team 1 Corporate R&d Center Samsung Sdi Co. Ltd.
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Park Hye-hyang
Technology Development Team 1 Corporate R&d Center Samsung Sdi Co. Ltd.
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PARK Ji-Yong
Technology Development Team 1, Corporate R&D Center, Samsung SDI Co., LTD.
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LEE Ki-Yong
Technology Development Team 1, Corporate R&D Center, Samsung SDI Co., LTD.
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CHUNG Ho-Kyoon
Technology Development Team 1, Corporate R&D Center, Samsung SDI Co., LTD.
関連論文
- Design of Sequential Lateral Solidification Crystallization Method for Low Temperature Poly-Si Thin Film Transistors
- Design of Sequential Lateral Solidification Crystallization Method for Low Temperature Poly-Si Thin Film Transistors