Local Structural Properties in the Terahertz Semiconductor Zn1-xCdxTe
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概要
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Local structural properties of wide-band-gap semiconductors, Zn1-xCdxTe (ZCT) crystals ($x=0--0.25$), were studied using X-ray absorption fine structure (XAFS) measurements at the Te $L_{1}$- and Zn $K$-edges. A previous study by Liu et al. 1 reported that ZCT emits or absorbs terahertz (THz) signals with a best efficiency when $x\simeq 0.05$. The XAFS studies show that the disorder and the bond length of Te–Zn pairs have maximum values at about $x=0.05$. We discuss that these structural transitions are relevant to the efficiency of THz emission and absorption in ZCT crystals. We also find that the distance of Te–Cd pairs is at least ${\sim}0.2$ Å longer than that of Te–Zn pairs and that Cd doping causes disorder/distortion in both Te and Zn sites in the crystals.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-10-15