Evolution of Grain and Micro-Void Structure in Electroplated Copper Interconnects
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2002-07-01
著者
-
Nakamura Tomoji
Lsi Materials Development Department Fujitsu Akiruno Technology Center
-
HOBBS Anthony
LSI Materials Development Department, Fujitsu Akiruno Technology Center
-
MURAKAMI Satoshi
LSI Materials Development Department, Fujitsu Akiruno Technology Center
-
HOSODA Tsotomi
LSI Materials Development Department, Fujitsu Akiruno Technology Center
-
OHTSUKA Satoshi
LSI Materials Development Department, Fujitsu Akiruno Technology Center
-
MIYAJIMA Motoshu
LSI Materials Development Department, Fujitsu Akiruno Technology Center
-
SUGATANI Shinji
LSI Materials Development Department, Fujitsu Akiruno Technology Center
-
Ohtsuka Satoshi
Lsi Materials Development Department Fujitsu Akiruno Technology Center
-
Hobbs Anthony
Lsi Materials Development Department Fujitsu Akiruno Technology Center
-
Hosoda Tsotomi
Lsi Materials Development Department Fujitsu Akiruno Technology Center
-
Sugatani Shinji
Lsi Materials Development Department Fujitsu Akiruno Technology Center
-
Murakami Satoshi
Lsi Materials Development Department Fujitsu Akiruno Technology Center
-
Miyajima Motoshu
Lsi Materials Development Department Fujitsu Akiruno Technology Center
関連論文
- Integration of High Performance CMOS Logic LSI by Applying Cu Wiring to SiLK^/SiO_2 Hybrid Structure
- Evolution of Grain and Micro-Void Structure in Electroplated Copper Interconnects