Influences of In_2O_3 Crystal Grains Formed by Annealing on Characteristics of Hexagonal InN Crystalline Films Grown on Si(111) Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
-
Yodo Tokuo
Department Of Electronics Information And Communication Engineering Osaka Institute Of Technology
-
Harada Yoshiyuki
Department of Physics, Faculty of Science, Osaka University
-
Harada Yoshiyuki
Department Of Applied Physics Osaka Institute Of Technology
-
KITAYAMA Yasunobu
Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology
-
MIYAKI Kazunari
Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology
-
YONA Hiroaki
Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology
-
Yona Hiroaki
Department Of Electronics Information And Communication Engineering Osaka Institute Of Technology
-
Miyaki Kazunari
Department Of Electronics Information And Communication Engineering Osaka Institute Of Technology
-
Kitayama Yasunobu
Department Of Electronics Information And Communication Engineering Osaka Institute Of Technology
関連論文
- Study on Phase Transition of C_ through Fourier-Transform Infrared Spectroscopic Measurements
- Internal Stark Effect by Inhomogeneous Electric Fields in Highly Compensated p-InSb
- Influences of In_2O_3 Crystal Grains Formed by Annealing on Characteristics of Hexagonal InN Crystalline Films Grown on Si(111) Substrates