10Gbps High Power Electro-Absorption Modulated Laser Monolithically Integrated with a Semiconductor Optical Amplifier for Long-Distance Transmission

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-01-15

著者

• KANG Byung-Kwon

  Photonics Salution Lab., Samsung Electronics

• Kang Byung-kwon

  Photonics-solution Laboratory Telecommunication R&d Center Samsung Electronics Co. Ltd.

• KIM Jong-Ryeol

  Department of Optical Engineering, Sejong University

• Kim Jong-ryeol

  Department Of Optical Engineering Sejong University

関連論文

• Broadbnd All-Optical Wavelength Conversion Using a Gain Peak Wavelength-Shifted Semiconductor Optical Amplifier Jutegrated Distributed Feedback Laser Diode Structure
• All-Optical AND Gate Using Probe and Pump Signals as the Multiple Binary Points in Cross Phase Modulation : Optics and Quantum Electronics
• 10Gbps High Power Electro-Absorption Modulated Laser Monolithically Integrated with a Semiconductor Optical Amplifier for Long-Distance Transmission
• Broadband All-Optical Wavelength Conversion Using a Gain Peak Wavelength-Shifted Semiconductor Optical Amplifier Integrated Distributed Feedback Laser Diode Structure

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