Extended SiC Defects: Polarized Light Microscopy Delineation and Synchrotron White-Beam X-Ray Topography Ratification

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概要

• 論文の詳細を見る

• A simple imaging technique using polarized light microscopy (PLM) has been developed to delineate and map the defects in silicon carbide (SiC) wafers. The correlation of different defects using synchrotron white-beam X-ray topography (SWBXT) and PLM has been established. The previously reported wave-shaped PLM features observed using PLM are confirmed to be screw dislocations by SWBXT. PLM can be used for rapid assessment of the quality of SiC substrates and substrates with an epitaxial film.

• Japan Society of Applied Physicsの論文
• 2003-09-15

著者

• Vetter William

  Department Of Material Science And Engineering State University Of New York At Stony Brook

• Ma Xianyun

  Electrical Engineering Department, University of South Carolina, Columbia, South Carolina 29208, U.S

• Dudley Michael

  Department of Material Science and Engineering, State University of New York at Stony Brook, Stony B

• Sudarshan Tangali

  Electrical Engineering Department, University of South Carolina, Columbia, South Carolina 29208, U.S

• Ma Xianyun

  Electrical Engineering Department University Of South Carolina

• Sudarshan Tangali

  Electrical Engineering Department University Of South Carolina

• Dudley Michael

  Department Of Material Science And Engineering State University Of New York At Stony Brook

関連論文

• Extended SiC Defects: Polarized Light Microscopy Delineation and Synchrotron White-Beam X-Ray Topography Ratification

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