Growth and Characterization of Tl2S Single Crystals

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概要

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• Single crystals of the Tl2S compound were grown for the first time in our laboratory by a new crystal growth technique based on a modification of the traveling heater method technique (THM). This growth was performed in our laboratory. Electrical conductivity, Hall effect and thermoelectric power (TEP) measurements were carried out in the temperature range (200–575 K). Throughout these measurements, various physical parameters such as effective mass of charge carriers, carrier mobility, diffusion length, diffusion coefficient, and the relaxation time for both majority and minority carriers were found. In conjunction with electrical conductivity and charge carrier concentration, thermoelectric power is discussed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-09-15

著者

• Galal E.

  Physics Department Faculty Of Science

• Gamal G.

  Physics Department Faculty Of Science

• Gerges M.

  Physics Department Faculty Of Science

• Zied M.

  Physics Department, Faculty of Science, Qena 83511, Egypt

関連論文

• Growth and Characterization of Tl2S Single Crystals

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