Different void shapes in Si at the SiC thin film/Si(111) substrate interface
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概要
- 論文の詳細を見る
- Published for the Japanese Society of Electron Microscopy by Oxford University Pressの論文
- 2001-02-01
著者
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Richter W
Friedrich‐schiller‐univ. Jena Jena Deu
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RICHTER W.
Institut fur Festkorperphysik, PN 6-1, Technische Universitat Berlin
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JINSCHEK Jorg
Institute of Solid State Physics, Friedrich-Schiller-University
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KAISER U.
Institute of Solid State Physics, Friedrich-Schiller-University
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Jinschek Jorg
Institute Of Solid State Physics Friedrich-schiller-university
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Richter W.
Institut Fur Festkorperphysik Friedrich-schiller University
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Kaiser U.
Institute Of Solid State Physics Friedrich-schiller-university
関連論文
- Polycrystalline CuGaSe_2 Thin Films Grown by CVD with I2 as Transport Agent
- Different void shapes in Si at the SiC thin film/Si(111) substrate interface
- A TEM study of local non-uniformities in epitaxial 2H-AIN films on Si(111) substrate