A TEM study of local non-uniformities in epitaxial 2H-AIN films on Si(111) substrate
スポンサーリンク
概要
- 論文の詳細を見る
- Published for the Japanese Society of Electron Microscopy by Oxford University Pressの論文
- 1999-10-01
著者
-
RICHTER W.
Institut fur Festkorperphysik, PN 6-1, Technische Universitat Berlin
-
KAISER Ute
Institut fur Festkorperphysik, Friedrich-Schiller University
-
Kaiser Ute
Institut Fur Festkorperphysik Friedrich-schiller University
-
Kaiser Ute
Institut Fur Festkorperphysik Friedrich-schiller Universitat
-
KHODOS I.
Institute of Microelectronics Technology and High Purity Materials RAS
-
JINSCHEK J.
Institut fur Festkorperphysik, Friedrich-Schiller University
-
Jinschek J.
Institut Fur Festkorperphysik Friedrich-schiller University
-
Richter W.
Institut Fur Festkorperphysik Friedrich-schiller University
-
Khodos I.I.
Institute of Microelectronics Technology and High Purity Materials RAS
関連論文
- Polycrystalline CuGaSe_2 Thin Films Grown by CVD with I2 as Transport Agent
- Different void shapes in Si at the SiC thin film/Si(111) substrate interface
- The structure of Si nanocrystals on SiC
- A TEM study of local non-uniformities in epitaxial 2H-AIN films on Si(111) substrate
- Nanocrystal formation in hexagonal SiC after Ge^+ ion implantation
- The effect of the signal-to-noise ratio in CBED patterns on the accuracy of lattice parameter determination