Correlation of Thermal with Structural and Optical Properties of High Quality GaN/Sapphire (0001) Grown by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• In this study, we compare three unintentionally doped GaN samples, grown in an EMCORE commercial reactor by metalorganic chemical vapor deposition (MOCVD) on sapphire (0001), with the growth parameters optimized in order to improve the crystalline quality. A direct correlation between higher thermal conductivity values and increasing low temperature (77 K) ratio of the near band edge/deep level photoluminescence (PL) signals, decreasing surface roughness and dislocation density, and narrowing of the full-width at half maximum (FWHM) from X-ray diffraction (XRD) scans was established indicating the importance of growth optimization. The implications of these results for optoelectronic device applications will be discussed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-07-15

著者

• Pollak Fred

  Physics Department And New York State Center For Advanced Technology In Ultrafast Photonic Materials

• Florescu Doru

  Emcore Corporation

• Lee Dong

  EMCORE Corporation, 145 Belmont Drive, Somerset, NJ 08873, USA

• Ting Steve

  EMCORE Corporation, 145 Belmont Drive, Somerset, NJ 08873, USA

• Ramer Jeff

  EMCORE Corporation, 145 Belmont Drive, Somerset, NJ 08873, USA

• Ramer Jeff

  Emcore Corporation

• Ting Steve

  Emcore Corporation

関連論文

• Temperature Dependence of Quantized States in Strained-Layer In_Ga_As/GaAs Single Quantum Well
• Correlation of Thermal with Structural and Optical Properties of High Quality GaN/Sapphire (0001) Grown by Metalorganic Chemical Vapor Deposition
• Composition Control of InGaAsP Laser Structures Using In-Situ Emissivity Corrected Pyrometry During Epitaxial Growth

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