Mechanism of Charging Reduction in Pulsed Plasma Etching

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概要

• 論文の詳細を見る

• Numerical simulations of charging and etching in time-modulated high-density plasmas suggest a new mechanism for the reduction of pattern-dependent charging,which is based on low energy positive ions. During the power-off period and beforethe sheath collapses, the electron temperature and plasma potential decrease rapidly,resulting in low energy ions which can be deflected by smaller local electric fields.The flux of deflected ions to the upper mask sidewalls increases enabling neutralizationof the negative charge accumulated there due to the electron shading effect.Current balance at the trench bottom surface is achieved at lower charging potentials,which lead to significantly reduced notching and gate oxide degradation.Pulsing period and duty ratio are examinedas parameters to control the performance of pulsed plasmas.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1998-04-30

著者

• Giapis Konstantinos

  Division Of Chemistry And Chemical Engineering California Institute Of Technology

• Hwang Gyeong

  Division of Chemistry and Chemical Engineering, California Institute of Technology,

• Hwang Gyeong

  Division Of Chemistry And Chemical Engineering California Institute Of Technology

関連論文

• Mechanism of Charging Reduction in Pulsed Plasma Etching
• Pattern-Dependent Charging and the Role of Electron Tunneling

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