Reducing the Effects of Plasma Proximity in Plasma Immersion Ion Implantation

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概要

• 論文の詳細を見る

• Plasma Immersion Ion Implantation is shown to be a promising candidate for low-energy, high-dose ultra large-scale integration (ULSI) applications like ultra-shallow junction processing. Junctions shallower than 65 nm at a background concentration of 1018 cm-3 have been made with BF3 PIII (p-type) and PH3/H2 PIII (n-type). Remaining concerns about PIII processing include impurity contamination, surface erosion, charging of thin oxide devices, and interaction with photoresist. Contamination can be reduced through proper machine design and cleaning. Surface erosion is minimized by using higher frequency implantation: although the erosion rate rises, the dose rate increases faster. Charging becomes severe at higher frequencies, so a moderate frequency (around 10–20 kHz) is recommended to minimize both effects. The effect of PIII-photoresist interaction on devices is comparable to that seen with conventional implantation.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-07-30

著者

• Jones Erin

  Department Of Electrical Engineering And Computer Sciences University Of California At Berkeley

• Cheung Nathan

  Department Of Electrical Engineering And Computer Sciences University Of California At Berkeley

• Shao Jiqun

  Eaton Corporation, Semiconductor Equipment Division, Beverly, MA 01915 USA

• Denholm A.

  Eaton Corporation, Semiconductor Equipment Division, Beverly, MA 01915 USA

• Shao Jiqun

  Eaton Corporation Semiconductor Equipment Division

関連論文

• Plasma Immersion Ion Implantation for Electronic Materials
• Reducing the Effects of Plasma Proximity in Plasma Immersion Ion Implantation

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