Use of Indium and Gallium as P-Type Dopants in Si 0.1 µm MOSFETs

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概要

• 論文の詳細を見る

• Devices with a channel length of 0.1 µm, employing In and B as p-type channel dopants, were fabricated to investigate the short channel effect. In this study, the benefits of using In instead of B are investigated with respect to the suppression of the short channel effect, the gate quality, the mobility and the long channel threshold voltage value. It is concluded that the use of In causes no direct complications. The advantage of using In lies in the suppression of the short channel effect. In this way, the conventional planar bulk device employing In as a channel implant can be scaled further at least for one generation of metal oxide semiconductor transistors without loss in current driveability. The feasibility of Ga as an ultra shallow p-type extension is also investigated.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• De Meyer

  Advanced Silicon Devices Interuniversity Microelectronics Center (imec)

• Meyer Kristin

  Advanced Silicon Devices Interuniversity Microelectronics Center (imec)

• Biesemans Serge

  Advanced Silicon Devices Interuniversity Microelectronics Center (imec)

• Kubicek Stefan

  Advanced Silicon Devices Interuniversity Microelectronics Center (imec)

関連論文

• Polycrystalline Silicon Single-Electron Transistor with Gate-Dependent Two-Period Current Oscillations
• Analytical Calculation of Subthreshold Slope Increase in Short-Channel MOSFET's by Taking Drift Component into Account
• Use of Indium and Gallium as P-Type Dopants in Si 0.1 µm MOSFETs

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