Analytical Calculation of Subthreshold Slope Increase in Short-Channel MOSFET's by Taking Drift Component into Account

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概要

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• Modeling of the subthreshold slope S and the threshold voltage V_T has been done based on the fundamental equations governing the metal-oxide-semiconductor field-effect transistor (MOSFET). Taking the drift as well as the diffusion component of the current into account resulted in a physically complete description of the short-channel effect. The method calculates the potential from the 2D Poisson equation, the minority carrier density from the continuity equation and the weak inversion current density from the drift-diffusion model. As an example, the detailed calculation of the S factor is given. The new closed-form formula for S includes the L dependence in an accurate way.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Meyer Kristin

  Advanced Silicon Devices Interuniversity Microelectronics Center (imec)

• Biesemans S

  Interuniv. Microelectronics Center (imec) Leuven Bel

• Biesemans Serge

  Advanced Silicon Devices Interuniversity Microelectronics Center (imec)

関連論文

• Polycrystalline Silicon Single-Electron Transistor with Gate-Dependent Two-Period Current Oscillations
• Analytical Calculation of Subthreshold Slope Increase in Short-Channel MOSFET's by Taking Drift Component into Account
• Use of Indium and Gallium as P-Type Dopants in Si 0.1 µm MOSFETs

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