Advantages of Ultra-Thin SIMOX/CMOS based on Well-Established 0.8 μm Mass-Production Technologies for Low Power 1 V Phase Locked Loop Circuits
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-02-01
著者
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Sukegawa Kazuo
Fujitsu Ltd.cmos Process Development Division
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KAWAMURA Seiichiro
Fujitsu Limited
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Kawai S
St. Marianna Univ. School Of Medicine Kawasaki Jpn
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Tsuboi Osamu
Fujitsu Ltd. CMOS Process Development Division, 1015, Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Warashina Suguru
Fujitsu Ltd. CMOS Process Development Division, 1015, Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Kawai Shinichi
Fujitsu Ltd. CMOS Process Development Division, 1015, Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Sekine Shinichi
Fujitsu Ltd. Analog LSI Development Division, 1015, Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Takada Keniji
Fujitsu Ltd. Analog LSI Development Division, 1015, Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Suzuki Hirokazu
Fujitsu Ltd. Analog LSI Development Division, 1015, Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Tsuboi Osamu
Fujitsu Ltd.cmos Process Development Division
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Takada Keniji
Fujitsu Ltd.analog Lsi Development Division
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Sekine Shinichi
Fujitsu Ltd.analog Lsi Development Division
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Kawamura Seiichiro
Fujitsu Ltd.cmos Process Development Division
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Warashina Suguru
Fujitsu Ltd.cmos Process Development Division
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Suzuki Hirokazu
Fujitsu Ltd.analog Lsi Development Division
関連論文
- Lateral Epitaxial Growth in Poly-Si Film over SiO_2 from Single-Si Seed by Scanning CW Ar Laser Annealing
- Advantages of Ultra-Thin SIMOX/CMOS based on Well-Established 0.8 μm Mass-Production Technologies for Low Power 1 V Phase Locked Loop Circuits