Indium Incorporation Coefficients in the Growth of AlInGaAs/Al0.3Ga0.7As Quantum Wells by Molecular Beam Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る

• Using the emission wavelength and well thickness data of AlInGaAs/Al0.3Ga0.7As quantum wells obtained from room temperature photoluminescence and transmission electron microscopy, indium incorporation coefficients are determined for the growth of the quantum wells by molecular beam epitaxy (MBE). At a growth temperature of 600°C, the indium incorporation coefficient is found to be 0.54.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-06-15

著者

• Chua Soo-jin

  Center Of Optoelectronics National University Of Singapore

• Chua Soo-jin

  Center For Optoelectronics Department Of Electrical Engineering National University Of Singapore Ins

• Zhang Zhi-he

  Center For Optoelectronics Department Of Electrical Engineering National University Of Singapore

関連論文

• Blocking Impurities in Organic Light Emitting Device by Inserting Parylene Interlayer
• Indium Incorporation Coefficients in the Growth of AlInGaAs/Al0.3Ga0.7As Quantum Wells by Molecular Beam Epitaxy
• Blocking Impurities in Organic Light Emitting Device by Inserting Parylene Interlayer

スポンサーリンク