スポンサーリンク
Wissenschaftliches Zentrum Fur Materialwissenschaften (wzmw) Und Fachbereich Phsik Philipps-universi | 論文
- New Developments of Less Toxic Group-V Precursurs for the Metalorganic Vapour Phase Epitaxy of III-V-Semiconductors: In-Situ-Formation of As-H Functions by Thermal β-Elimination of Specific As-Trialkyl Compounds
- Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy : Semiconductors and Semiconductor Devices
- Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy : Condensed Matter