スポンサーリンク
ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan | 論文
- Clarification of Nitridation Effect on Oxide Formation Methods
- Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure