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Toshiba Research and Development Center, Toshiba Corp. | 論文
- Characterization of a Newly Developed Contrast Enhancement Material for G-line Exposure
- Growth and Properties of GaAs_xP_ Liquid-Phase Epitaxial Layers Grown on GaP
- Green and Red Electroluminescences from Diffused Gallium Phosphide p-n Junctions
- Kinetics of the Vapor Growth of II-VI Compound Crystals. II. : Zinc Selenide
- Failure correlation for zircaloy-2 fuel cladding under high temperature transient conditions.