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Tokyo National College of Technology | 論文
- 正圧によって作られた負の圧力勾配を利用するトンネル圧力波のアクティブ制御
- 8-101 東京高専におけるくくり相当入試(口頭発表論文,(6)工学教育の個性化・活性化-I)
- (4)ものづくりの心を育てる物理教育を目指して(セッション1 教育システムA(講義・演習)I)
- 一次元金属のプラズマ周波数
- 一次元金属の分極関数
- On Properties of a Digital Watermarking Scheme Based on Complete Complementary Codes
- 24pSC-7 擬ギャップのミクロな起源
- pH 反応を利用した電流検出型酸性ガス, 塩基性ガスセンサの反応機構解析
- Synthesis conditions of graphite intercalation compound with Ca in molten Li-Ca alloy and its superconducting characteristics (小特集 炭素材料へのインターカレーシヨン)
- Remarks on the Algebraic Differential Equations
- Admissible Solution of Some Algebraic DifferentialEquation P(z,w')=Q(z,w)
- On the Bit Error Rate Performances of the Signal Design Methods for the CDMA Systems Using Complete Complementary Codes
- The Relation Between Tc and the Number of CuO_2 Sheetsin High Tc Superconductors
- Y_2O_3-Stabilized ZrO_2 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Residual Strain and Crystal Structure of BaTiO_3-SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Film Thickness Dependence of Dielectric Property and Crystal Structureof PbTiO_3 Film Prepared on Pt/SiO_2/Si Substrate by Metal Organic Chemical Vapor Deposition
- Preparation and Structure of Lead Magnesium Niobate Titanate Film by Double-Pulse Excitation using Nd:YAG and KrF Excimer Lasers
- Activation Energy of Oxygen Vacancy Diffusion of Yttria-Stabilized-Zirconia Thin Film Determined from DC Current Measurements below 150℃
- Orientation Control and Properties of Pb(Zr, Ti)O_3 Thin Films Deposited on Ni-Zn-Ferrite for Novel Ferroelectric/Ferromagnetic Memory Applications
- Effect of Yttria-Stabilized Zirconia Thickness on Crystal Structure and Electric Property of Epitaxial CeO_2/Yttria-Stabilized Buffer Layer in Metal/Ferroelectric/Insulator/Semiconductor Structure