スポンサーリンク
Tokyo Institute Of Technology Dept. Of Physical Electronics | 論文
- Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source
- Study of Inelastic Scattering Effect in Unstrained and Strain-Compensated GaInAs/GaInP Multiquantum Barriers
- Active Distributed Reflector Lasers Phase Adjusted by Groove Region
- Fabrication of InP/InGaAs DHBTs with Buried SiO_2 Wires