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Tokyo Electron Technology Development Institute Inc., Amagasaki, Hyogo 660-0891, Japan | 論文
- High-Quality SiO2 Film Formation below 400 °C by Plasma Enhanced Chemical Vapor Deposition Using Tetraethoxysilane Source Gas
- High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal--Oxide--Semiconductor Heterojunction Field-Effect Transistor on Si Substrate
- High Quality SiO