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Thomson-csf Lcr | 論文
- Device Quality SiO_2 Deposited by Distributed Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition without Substrate Heating
- Kinetics of Crystallization of Amorphous and Mixed-Phase Silicon Films Deposited by Pyrolysis of Disilane Gas at Very Low Pressure
- Kinetics of Interface State Generation Induced by Hot Carriers in N-Channel Polycrystalline Silicon Thin-Film Transistors