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Telecommunications Advancement Organization Of Japan Sendai Research Center:semiconductor Research I | 論文
- Digital Etching of InP by Intermittent Injection of Phosphorous Precursors in Ultra-high Vacuum
- Self-Limiting Growth of Specular InP Layer by Alternate Injection of Triethylindium and Tertiarybutylphosphine in Ultrahigh Vacuum
- Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum
- Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum
- Digital Etching of InP Using Tris-Dimethylaminophosphorus in Ultra-High Vacuum
- Phase Transitions in the Frustrated ABX_3 Compounds : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Magnetism : Spin Glass