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State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China | 論文
- Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas
- Dry Etching Characteristics of AlGaN/GaN Heterostructures Using Inductively Coupled H2/Cl2, Ar/Cl2 and BCl3/Cl2 Plasmas