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State Key Laboratory Of Crystal Materials Shandong University | 論文
- Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma
- Effect of Cd Reservoir on the Composition (y) of Cd_Zn_yTe Epilayers Grown by Hot Wall Epitaxy
- Growth and Evaluation of Cd_Zn_yTe Epilayers on (100) GaAs Substrates by Hot Wall Epitaxy
- Growth Kinetics of Hg_Cd_xTe Epilayers by Semiclosed Open-Tube Isothermal Vapor Phase Epitaxy
- Effect of CdTe Layer Thickness on Hg_Cd_xTe Epilayer Growth by Isothermal Vapor Phase Epitaxy Using (100) CdTe/GaAs Substrates and Void Formation at the Interface
- Structural Properties of TiC/Fe Nanoscale Multilayers Synthesized by the Ion-Beam Sputtering Technique
- Synthesis, Structures, and Two-Photon Absorption Properties of Two New Heterocycle-Based Organic Chromophores
- Photorefractive Oscillation in a Thin Plate of Ce-doped BaTiO_3 Crystal
- Graphene as a Q-Switcher for Neodymium-Doped Lutetium Vanadate Laser
- Mutual Action of Optical Activity and Electro-Optic Effect and Its Influence on the Electro-Optic Q-switch
- Symmetric,Asymmetric Charge Transfer Process of Substituted Stilbene or Its Analogues and the One-photon-/Two-Photons-Excited Emission
- Optical Bistability of a Neodymium-Doped Microchip Laser with Intracavity Saturable Absorber
- Diode-Pumped Actively Q-Switched Nd:Lu.Y.VO Laser at 1.34 μm
- High-Power Single- and Dual-Wavelength Nd:GdVO4 Lasers with Potential Application for the Treatment of Telangiectasia
- Diode-End-Pumped Continuous-Wave and Q-Switched Nd:GdVO4/KTP Laser at 671 nm
- Simultaneous Dual-Wavelength Operation of \beta-BaTeMo
- High-Power Single- and Dual-Wavelength Nd:GdVO_4 Lasers with Potential Application for the Treatment of Telangiectasia