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State Key Lab Of Integrated Optoelectronics Department Of Electronic Engineering Tsinghua University | 論文
- Novel Planar Electrode Structure for High-Speed (>40GHz) Electroabsorption Modulators
- 40GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme
- Characteristics of n-GaN After Cl_2/Ar and Cl_2/N_2 Inductively Coupled Plasma Etching
- Theoretical Analysis of Polarization Insensitive InGaAsP Multiple-Quantum-Wells Eletroabsorption Modulators with Negative Chirp
- 40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme
- 40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme