スポンサーリンク
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan | 論文
- Tunnel Magnetoresistance above 170% and Resistance--Area Product of 1 $\Omega$ (μm)2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier
- Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaOx Tunnel Barrier
- Effective Creation of Spin Polarization in p-Type Ge from a Fe/GeO