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Specialty Technology Division, United Microelectronics Corporation | 論文
- A Modified Capacitance-Voltage Method Used for L_ Extraction and Process Monitoring in Advanced 0.15μm Complementary Metal-Oxide-Semiconductor Technology and Beyond
- Performance and Reliability Improvement of Low-Power Embedded Flash Memory with Shallow Trench Isolation Structure
- A Modified Capacitance–Voltage Method Used for $L_{\text{eff}}$ Extraction and Process Monitoring in Advanced 0.15 $\mu$m Complementary Metal-Oxide-Semiconductor Technology and Beyond